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TE-OX (Oxides based technologies) has been founded in 2015 with the aim to develop new ultra-fast electronic components and devices based on oxide materials exhibiting Metal-Insulator Phase Transition (like VO2 and Nickelates).
The main activity of TE-OX is devoted to the modelling, simulation and |
manufacturing of new RF-switches based on VO2 and their integration on semiconducting platforms (Si, SiGe and GaN).
The TE-OX development strategy is based on collaboration with Academic partners for the research activities as well as with SMEs for the industrial development. |
